Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2005-12-14
2009-08-18
Tran, Binh X (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S077000, C216S089000, C216S102000, C977S742000
Reexamination Certificate
active
07575693
ABSTRACT:
A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
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Bertin Claude L.
Konsek Steven L.
Meinhold Mitchell
Rueckes Thomas
Yates Colin D.
Nantero Inc.
Tran Binh X
Wilmer Cutler Pickering Hale and Dorr LLP
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