Method of aligning deposited nanotubes onto an etched...

Details Method of aligning deposited nanotubes onto an etched... Method of aligning deposited nanotubes onto an etched...

2005-12-14

2009-06-02

Nguyen, Ha Tran (Department: 2829)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257S040000, C438S286000, C438S303000, C438S585000, C438S596000

Reexamination Certificate

active

07541216

ABSTRACT:
A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

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