Method of adjusting the threshold voltage of field effect transi

Details Method of adjusting the threshold voltage of field effect transi Method of adjusting the threshold voltage of field effect transi

1975-07-22

1977-03-22

Ozaki, G.

Metal treatment

Compositions

Heat treating

148175, 148186, 357 15, H01L 21265

Patent

active

040134830

ABSTRACT:
A method of adjusting the threshold voltages of field effect transistors, in particular of SCHOTTKY gate field-effect transistors, is provided. During the process of manufacture of the transistor, the channel charge carrier density is modified by ion implantation. A monitoring device, in the form of a test transistor, is manufactured at the same time as the production transistors and on the same wafer thereas. An appendix of the test transistor makes it possible to measure the threshold voltage and saturation current, during ionic implantation.

REFERENCES:
patent: 3413531 (1968-11-01), Leith
patent: 3539876 (1970-11-01), Feinberg et al.
patent: 3558366 (1971-01-01), Lepselter
patent: 3666573 (1972-05-01), Brackelmanns
patent: 3676229 (1972-07-01), Einthoven et al.
patent: 3753774 (1973-08-01), Veldric
patent: 3774088 (1973-11-01), Magdo et al.
patent: 3881964 (1975-05-01), Cresswell et al.
patent: 3895966 (1975-07-01), MacDougall et al.
Kircher et al. "Interconnection Method for Integrated Circuits" IBM Tech. Disc. Bull., vol. 13, No. 2, July '70, p. 436.

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