Method of adjusting a threshold voltage for a semiconductor devi

Details Method of adjusting a threshold voltage for a semiconductor devi Method of adjusting a threshold voltage for a semiconductor devi

1995-04-17

1996-07-02

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437 45, 148DIG150, H01L 21226, H01L 21335

Patent

active

055321755

ABSTRACT:
A method of adjusting a threshold voltage for a semiconductor device on a semiconductor on insulator substrate includes performing a threshold voltage adjustment implant (25) after formation of a gate structure (16) to reduce the diffusion of implanted dopant (26). Reducing dopant diffusion eliminates the narrow channel effect which degrades device performance. Implanting the dopant (26) after formation of the gate structure (16) simplifies processing of semiconductor device (28) by eliminating a photolithography step which is accomplished by utilizing photoresist (21) used for a source and drain implant (22).

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patent: 4948745 (1990-08-01), Pfiester et al.
patent: 5028552 (1991-07-01), Ushika
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5091328 (1992-02-01), Miller
patent: 5248627 (1993-09-01), Williams

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