Method of activating implanted ions by incoherent light beam

Metal treatment – Compositions – Heat treating

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29576B, 29576T, 148187, 357 91, H01L 21265

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active

044823932

ABSTRACT:
A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.

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