Metal treatment – Compositions – Heat treating
Patent
1982-11-10
1984-09-18
Roy, Upendra
Metal treatment
Compositions
Heat treating
148171, 357 91, 357 61, H01L 21477
Patent
active
044722060
ABSTRACT:
Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.
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Hodgson Rodney T.
Jackson Thomas N.
Rupprecht Hans S.
Woodall Jerry M.
International Business Machines - Corporation
Riddles Alvin J.
Roy Upendra
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