Method of accurate evaluation on magnetoresistive read element

Details Method of accurate evaluation on magnetoresistive read element Method of accurate evaluation on magnetoresistive read element

2007-04-03

2007-04-03

Kim, Paul D. (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S603070, C029S603130, C029S603140, C310S324000, C310S324000

Reexamination Certificate

active

09951290

ABSTRACT:
The magnetoresistance is measured for a magnetoresistive layered-structure, such as a spin valve film, prior to formation of an upper shield layer as well as patterning of a lower shield layer. The magnetic influence of the upper and lower shield layers can completely be eliminated during the measurement of the magnetoresistance. The magnetoresistive layered-structure is allowed to reliably receive the magnetic field over a wider range including a lower magnetic field range. It is accordingly possible to measure the magnetoresistance properly reflecting the magnetic characteristic of the magnetoresistive layered-structure. It is possible to find deficiency of a magnetoresistive read element at an earlier stage of the method.

REFERENCES:
patent: 5514953 (1996-05-01), Schultz et al.
patent: 6002553 (1999-12-01), Stearns et al.
patent: 6025977 (2000-02-01), Hu et al.
patent: 6278592 (2001-08-01), Xue et al.
patent: 6299507 (2001-10-01), Katoh et al.
patent: 6433972 (2002-08-01), Mao et al.
patent: 60105286 (1985-06-01), None
patent: 60-171618 (1985-09-01), None
patent: 01266393 (1989-10-01), None
patent: 10-294503 (1998-11-01), None
“GMR materials for low field applications”; Daughton, J.M.; Chen, Y.J.; Magnetics, IEEE Transactions on , vol. 29, Issue: 6 Nov 1993; pp. 2705-2710.

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