Method in etching of a substrate

Details Method in etching of a substrate Method in etching of a substrate

2005-06-14

2005-06-14

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

C216S041000, C216S083000

Reexamination Certificate

active

06905628

ABSTRACT:
In etching, an etchant (4) for etching of a substrate (1) is applied in a given pattern. Before etching, a resist layer (2) is applied to the substrate (1) in said pattern to define at least one exposed portion (3) of the substrate (1). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (1) to also define said pattern, i.e., at the periphery of the exposed portion (3). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery.

REFERENCES:
patent: 4877480 (1989-10-01), Das
patent: 5176792 (1993-01-01), Fullowan et al.
patent: 5279702 (1994-01-01), Douglas
patent: 5837616 (1998-11-01), Yamanaka
patent: 5858257 (1999-01-01), Naitoh
patent: 5962346 (1999-10-01), Shue et al.
patent: 3-82120 (1991-04-01), None
patent: 513 829 (2000-11-01), None
patent: WO 99/45179 (1999-09-01), None

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