Method forming split thin film capacitors with multiple...

Metal working – Piezoelectric device making

Reexamination Certificate

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C029S025410, C029S025420, C029S830000, C029S831000, C029S832000, C361S321200, C361S306100

Reexamination Certificate

active

10954644

ABSTRACT:
A method for forming a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit such as a microprocessor, that may need a closely coupled capacitor supplying and moderating power to the microprocessor in order to quickly respond to instantaneous power demands that may be found in high clock rate devices. The method may supply a lower voltage power supply level for minimum sized transistors in the fast core logic portions of the microprocessor, and a higher voltage power supply level for the cache memory and I/O transistors.

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patent: WO-2006/039438 (2006-07-01), None

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