Method for writing to a flash memory array during erase suspend

Static information storage and retrieval – Floating gate – Particular biasing

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365900, G11C 1300

Patent

active

053413300

ABSTRACT:
A method for writing data to an entry in a portion of a flash EEPROM memory array during a period in which that portion of the array is being erased and writing is prohibited. The method includes writing the data to a new entry position apart from the portion of the array which is being erased along with a revision number which is greater than the revision number of the original data in the original portion of the array, writing of the busy condition of the original entry to a temporary storage position apart from the portion of the array which is being erased, and invalidating entries listed in the temporary storage position when the erase operation is concluded.

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