Method for writing into semiconductor memory

Details Method for writing into semiconductor memory Method for writing into semiconductor memory

1991-06-18

1994-03-29

James, Andrew J.

Static information storage and retrieval

Read only systems

Fusible

3652257, 257 50, 257529, 257530, 257665, G11C 1906, H01L 2702

Patent

active

052991512

ABSTRACT:
A method is provided for writing into a semiconductor memory which includes a MOS transistor formed on a semiconductor substrate and an anti-fuse formed of an insulating film and an upper electrode on a drain of the MOS transistor. The method includes the steps of applying a first voltage between the upper electrode of the anti-fuse and a source of the MOS transistor to cause dielectric breakdown of the insulating film of the anti-fuse, with the MOS transistor turned on; and applying a second voltage between the upper electrode of the anti-fuse and the semiconductor substrate so that a larger amount of current flows than the amount of current required for breaking down the insulating film of the anti-fuse.

REFERENCES:
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4970686 (1990-11-01), Naruke et al.
patent: 5119163 (1992-06-01), Ishihara et al.
Esmat Handy et al., "Dielectric Based Antifuse for Logic and Memory ICs"; from 1988 IEDM; pp. 786-789.

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