Method for writing data into non-volatile semiconductor memory c

Details Method for writing data into non-volatile semiconductor memory c Method for writing data into non-volatile semiconductor memory c

1998-08-31

2000-07-18

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 36518528, 36518503, 36518501, 36518524, G11C 702

Patent

active

060916370

ABSTRACT:
A method including: a first writing step for writing data by injecting electrons into the floating gate; a first verifying step for verifying whether the threshold voltage is higher than the first reference level after performing the first writing operation; a step of repeating the first writing step and the first verifying step until the threshold voltage becomes higher than the first reference level, if the threshold voltage is lower than the first reference level; a second verifying step for verifying whether the threshold voltage is higher than a second reference level which is set to be higher than the first reference level, if the threshold voltage is higher than the first reference level; a step of ending the writing operation if the threshold voltage is lower than the second reference level; and a second writing step for writing data by discharging electrons from the floating gate until the threshold voltage becomes higher than the first reference level and lower than the second reference level, if the threshold voltage is higher than the second reference level.

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Lai, Stephan., "Large Capacity Flash Memories for which Multivated and Three Dimensional Cells are Essential", (Feb. 1997) Nikkei Microdevices 62-71 (Translation Included).

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