Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-08-01
2009-12-29
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185280, C365S185290
Reexamination Certificate
active
07639537
ABSTRACT:
A method for writing data in a non volatile memory unit having memory pages includes a predetermined number of memory cells storing a memory word being a predetermined sequence of digital values. An erase operation erases the memory words in the memory page, setting the predetermined sequence of digital values to a sequence of complementary values. A program operation stores in the memory cell a word and sets a sequence of a word to be stored. For the memory cells of the memory page, the memory word is compared with the word to be stored. A positive check is returned if complementary values of the sequence correspond to complementary values of the predetermined sequence. If the check is negative, the erase operation is executed. The memory word is compared with the word to be stored and the program operation is executed if the word to be stored is different.
REFERENCES:
patent: 6256232 (2001-07-01), Chang et al.
patent: 6766409 (2004-07-01), Komatsu et al.
patent: 7362610 (2008-04-01), Salter et al.
patent: 7385850 (2008-06-01), Jeong et al.
patent: 2006/0174172 (2006-08-01), Nahas et al.
patent: 2007/0061504 (2007-03-01), Lee
patent: 1 486 984 (2004-12-01), None
Chichierchia Maria
Cimino Carlo
Sepe Paolo
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Incard S.A.
Jorgenson Lisa K.
Phung Anh
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