Method for whole field thin film stress evaluation

Optics: measuring and testing – Material strain analysis – By light interference detector

Reexamination Certificate

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C356S512000, C073S800000

Reexamination Certificate

active

07403270

ABSTRACT:
A novel method for whole field thin film stress evaluation is provided. Through the provided method, the whole filed thin film stress distribution for an optical thin film would be developed with a commercial interferometer, so that a whole field evaluation for the crack or peel-off of thin film is hence achievable.

REFERENCES:
patent: 6466308 (2002-10-01), Jaing et al.
patent: 7261985 (2007-08-01), Smith et al.
patent: 2005/0202328 (2005-09-01), Smith et al.

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