Method for wet etching and device used therein

Etching a substrate: processes – Nongaseous phase etching of substrate – Projecting etchant against a moving substrate or controlling...

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438750, 438754, C23F 100

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active

058582576

ABSTRACT:
A method of preventing the occurrence of side etch in a wet etching method to form a circuit layer which meets the requirement of a high circuit density. First, etching is partially done using etchant having a relatively high etching rate with a spray pressure of a relatively small value, then etching is carried out using a second etchant having a relatively low etching rate with a high spray pressure. In an optional finishing step, etchant containing abrasive is used.

REFERENCES:
patent: 5002627 (1991-03-01), Scheithauer et al.
patent: 5378308 (1995-01-01), Thoms
patent: 5436201 (1995-07-01), Chi et al.
patent: 5445986 (1995-08-01), Hirota
patent: 5547896 (1996-08-01), Linn et al.

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