Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-04-24
2007-04-24
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
With measuring or testing
C438S514000, C257SE21135
Reexamination Certificate
active
11033939
ABSTRACT:
The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant within the substrate (340) using an implant (370), the implant (370) moving at varying speeds across the substrate (340) to provide different concentrations of the dopant within the substrate (340).
REFERENCES:
patent: 4283631 (1981-08-01), Turner
patent: 4736107 (1988-04-01), Myron
patent: 4922106 (1990-05-01), Berrian et al.
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5121185 (1992-06-01), Tamba et al.
patent: 5627105 (1997-05-01), Delfino et al.
patent: 5963799 (1999-10-01), Wu
patent: 6097064 (2000-08-01), Saitoh et al.
patent: 6107108 (2000-08-01), Chen et al.
patent: 6107149 (2000-08-01), Wu et al.
patent: 6187643 (2001-02-01), Borland
patent: 6346463 (2002-02-01), Sultan et al.
patent: 6580083 (2003-06-01), Berrian
patent: 6710359 (2004-03-01), Olson et al.
patent: 2004/0007679 (2004-01-01), Viviani
patent: 2005/0002236 (2005-01-01), Morikawa et al.
patent: 2005/0093033 (2005-05-01), Kinoshita et al.
patent: 2005/0127439 (2005-06-01), Matsuzaki et al.
patent: 2005/0184254 (2005-08-01), Matsumoto et al.
patent: 03-173441 (1991-07-01), None
patent: 11-233450 (1997-08-01), None
patent: 11-086774 (1999-03-01), None
Bernstein James D.
Collins Sean M.
Loewecke Jeffrey G.
Brady III W. James
McLarty Peter K.
Smith Bradley K
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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