Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1975-12-15
1977-03-22
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 3700
Patent
active
040138917
ABSTRACT:
In the bombardment of targets with beams of charged particles, a method for varying and controlling the diameter of such beams by passing the beam through an envelope of conductive material; the envelope is spaced from and coaxial with the beam. A selected D.C. potential is applied to the envelope, and the beam diameter is controlled by changing this applied potential in a direction away from ground potential to increase the beam diameter or by changing the potential in a direction toward ground potential to decrease said beam diameter.
REFERENCES:
patent: 3434894 (1969-03-01), Gale
patent: 3619608 (1971-11-01), Westerberg
patent: 3689782 (1972-09-01), Epstein et al.
"Focused Ion Beams in Microfabrication," Seilger et al., J. Appl. Phys., vol. 45, No. 3, Mar. 1974, pp. 1416-1422.
Ko Wen-Chuang
Sawatzky Erich
Anderson B. C.
IBM Corporation
Kraft J. B.
Smith Alfred E.
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