Method for vapor phase deposition of gallium nitride film

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427255, 4272552, C23C 1630, C23C 1634

Patent

active

047924675

ABSTRACT:
A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:

REFERENCES:
patent: 3224911 (1965-12-01), Williams et al.
patent: 3224913 (1965-12-01), Ruehrwein
patent: 3406048 (1968-10-01), Immendorfer et al.
patent: 3635771 (1972-01-01), Shaw
patent: 3663320 (1972-05-01), Marmyama et al.
patent: 4204893 (1980-05-01), Cox
patent: 4250205 (1981-02-01), Constant et al.
patent: 4279670 (1981-07-01), Steele
patent: 4436769 (1984-03-01), Moss et al.
patent: 4645689 (1987-02-01), Cox
Coates, G. E., et al., "Organometallic Compounds", 1956, pp. 297-313 and 346-361
Shriver, et al., "Trihydrido(trimethylamine)gallium", Inorganic Syntheses, vol. 17, pp. 42-44 (1980)
Shirk, et al., "Lithium Tetrahydridogallate", Inorganic Syntheses, vol. 17, pp. 45-47 (1980)
Matloubian et al., "MOCVD Epitaxial Growth of Single Crystal GaN, AlN, and AL.sub.x Ga.sub.l-x N", Journal of Electronic Materials, vol. 14, no. 5, pp. 633-644 (1985)

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for vapor phase deposition of gallium nitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for vapor phase deposition of gallium nitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for vapor phase deposition of gallium nitride film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1909021

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.