Method for vapor epitaxial deposition of III/V materials utilizi

Details Method for vapor epitaxial deposition of III/V materials utilizi Method for vapor epitaxial deposition of III/V materials utilizi

1977-07-11

1979-04-03

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156610, 156613, 156614, 252 623GA, H01L 21205, H01L 21322

Patent

active

041475712

ABSTRACT:
A process is provided for the VPE growth of III/V compounds such as Al.sub.x Ga.sub.1-x As in which the group III elements are transported into the reaction zone in the form of organometallic compounds in the presence of a gaseous halogen or hydrogen halide such as hydrogen chloride (HCl).

REFERENCES:
patent: 3226270 (1965-12-01), Miederer et al.
patent: 3338761 (1967-08-01), Cheney et al.
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3721583 (1973-03-01), Blakeslee
patent: 3802967 (1974-04-01), Ladany et al.
patent: 3867202 (1975-02-01), Ichiki et al.
Rai-Choudhury et al., "Selective Growth . . . Gallium Arsenide," J. Electrochem. Soc., vol. 118, No. 1, Jan. 1971, pp. 107-110.
Weiner, M. E., "Si Contamination . . . GaAs and GaP."
IBID vol. 119, No. 4, Apr. 1972, pp. 496-504.
DiLorenzo, J. V., "Vapor Growth . . . GaAs . . . Layers," J. Crystal Growth 17 (1972), pp. 189-206.
Pogge et al., "Doping Behavior of Silicon . . . III-V . . . Films."
Ibid., 31 (1975), pp. 183-189.
Enstrom et al., "Influence of Gas Phase . . . GaAs P-N Junctions," J. Electrochem. Soc., vol. 121, Nov. 1974, pp. 1516-1523.

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