Method for vapor drying

Details Method for vapor drying Method for vapor drying

1992-07-27

1994-10-04

Bennett, Henry A.

Drying and gas or vapor contact with solids

Process

Gas or vapor contact with treated material

34 78, F26B 2106

Patent

active

053514190

ABSTRACT:
A multi-directional flow of isopropyl alcohol vapor is used to uniformly dry a semiconductor substrate. In one embodiment of the invention, isopropyl alcohol vapor (19), which is generated by an external vapor source (30), is injected into the vapor drying system at a location near the top portion (28) of the semiconductor substrate (20), while internally generated isopropyl alcohol vapors (18) are directed toward the bottom portion (26) of the semiconductor substrate (20). Therefore, both the top (28) and the bottom (26) portions of the semiconductor substrate (20) are dried at approximately the same time.

REFERENCES:
patent: 5249371 (1993-10-01), Saito

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