Method for vacuum baking indium in-situ

Details Method for vacuum baking indium in-situ Method for vacuum baking indium in-situ

1983-11-01

1985-12-17

Doll, John

Chemistry of inorganic compounds

Phosphorus or compound thereof

75 62, 148175, 148DIG130, C01B 2508

Patent

active

045592179

ABSTRACT:
A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature in excess of 850.degree. C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.

REFERENCES:
patent: 2871100 (1959-01-01), Guire et al.
patent: 2937075 (1960-05-01), Weiser
patent: 3269878 (1966-08-01), Wenzel et al.
patent: 3520810 (1970-07-01), Plaskett et al.
patent: 3877883 (1975-04-01), Berkman et al.
patent: 4220488 (1980-09-01), Duchemin et al.
Yamamoto et al., "InP Single Crystal Growth by the Synthesis Solute Diffusion Method," Japan J. Appl. Phys., vol. 17, (1978), No. 10, pp. 1869, 1870.
Clarke et al., "The Preparation of High Purity Epitaxial InP," Solid State Communications, vol. 8, pp. 1125-1128, (1970), Fergamon Press.

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