Metal working – Method of mechanical manufacture – Electrical device making
Patent
1983-07-12
1984-12-11
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29578, 29591, 357 67, H01L 21281
Patent
active
044869460
ABSTRACT:
A method for producing an NPN semiconductor device which has a titanium-tungsten barrier metal only in the N type contact windows is disclosed. A semiconductor wafer first undergoes the washed emitter process with the result that the N type collector and emitter contact windows are exposed to bare silicon and the P type contact windows are covered by a layer of silicon dioxide. A layer of titanium-tungsten alloy is deposited on the surface of the wafer. The titanium-tungsten layer is etched out of the P type contact regions using standard photolithographic techniques. The underlying layer of silicon dioxide in the P type contact regions is then also etched away. A layer of aluminum is then deposited across the surface of the wafer. The conductor interconnect photolithography is used to etch away all undesired aluminum. The remaining portions of the titanium-tungsten layer, not covered by aluminum signal lines, are then also etched away. This results in a structure which has titanium-tungsten barrier metal sandwiched between the aluminum signal lines and the silicon in the N type collector and emitter contact windows, but not in the P type contact windows.
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Jopke, Jr. Walter H.
Shier John S.
Auyang Hunter L.
Control Data Corporation
Genovese Joseph A.
Hearn Brian E.
Heller III Edward P.
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