Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-10-24
1997-10-07
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
437173, 437922, H01L 2900
Patent
active
056751745
ABSTRACT:
This invention provides a semiconductor device wherein a fuse structure can be formed of a normal metal wiring material and the fuse structure can be cut easily and surely. A laser beam is applied three times to the fuse structure composed of an Al wiring 22 and a passivation film 24 to cut the fuse. The Al wiring 22 is sublimated to be almost cut as a consequence of a first laser beam application. However, a part of sublimated aluminum is cooled and solidified to possibly hinder the cutting of the fuse. In order to cope with the above phenomenon, second and third laser beam applications are effected on a point of coordinates P2 (P3) so that the area S2 (S3) is completely damaged.
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Hitomi Takanori
Nakajima Hirofumi
Carroll J.
Rohm & Co., Ltd.
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