Method for using ammonium fluoride solution in a...

Details Method for using ammonium fluoride solution in a... Method for using ammonium fluoride solution in a...

2005-02-08

2005-02-08

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000, C204S166000, C204S166000, C216S084000, C216S094000

Reexamination Certificate

active

06852643

ABSTRACT:
A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol solution for activating the surface of wafer and into an ammonium fluoride solution as an etching solution; and illuminating the back of wafer with a halogen light and performing a photoelectrochemical etching process in a potentiostatic.

REFERENCES:
patent: 4482443 (1984-11-01), Bacon et al.
patent: 4613417 (1986-09-01), Laskowski et al.

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