Method for using additives in the caustic etching of silicon...

Details Method for using additives in the caustic etching of silicon... Method for using additives in the caustic etching of silicon...

2007-03-20

2007-03-20

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C438S750000, C134S001100

Reexamination Certificate

active

10692661

ABSTRACT:
A method for the caustic etching of silicon which is of importance for the semiconductor industry and silicon wafer manufacture in particular, that includes using one or more iodate or chlorite salts as additives in the etching process to achieve improved surface conditions, such as smaller facets and lower roughness, on the resulting silicon substrate.

REFERENCES:
patent: 5466389 (1995-11-01), Ilardi et al.
patent: 5714407 (1998-02-01), Maeno et al.
patent: 6431186 (2002-08-01), Morita et al.
patent: 6458289 (2002-10-01), Merchant et al.
patent: 6641630 (2003-11-01), Sun
patent: 2001/0044264 (2001-11-01), Lack et al.

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