Method for using a wet etch to manufacturing a semiconductor...

Details Method for using a wet etch to manufacturing a semiconductor... Method for using a wet etch to manufacturing a semiconductor...

2007-01-02

2007-01-02

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S592000, C438S682000, C438S664000

Reexamination Certificate

active

10884665

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, forming a polysilicon gate electrode (250) over a substrate (210) and forming a protective layer (260) over the polysilicon gate electrode (250) to provide a capped polysilicon gate electrode (230). The method further includes forming a protective oxide (510) on a surface proximate the polysilicon gate electrode (250), and removing the protective oxide (510) using a wet etch, the wet etch not having a substantial impact on the protective layer (260).

REFERENCES:
patent: 4221044 (1980-09-01), Godejahn et al.
patent: 6245682 (2001-06-01), Fu et al.
patent: 6432776 (2002-08-01), Ono
patent: 6821887 (2004-11-01), Wieczorek et al.

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