Method for using a hard mask for critical dimension growth...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S710000, C438S742000, C252S079100

Reexamination Certificate

active

06951820

ABSTRACT:
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.

REFERENCES:
patent: 3615953 (1971-10-01), Hill
patent: 4350563 (1982-09-01), Takada et al.
patent: 4390394 (1983-06-01), Mathuni et al.
patent: 4496419 (1985-01-01), Nulman et al.
patent: 4741799 (1988-05-01), Chen et al.
patent: 4948462 (1990-08-01), Rossen
patent: 5126288 (1992-06-01), Nakagawa
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5320979 (1994-06-01), Hashimoto et al.
patent: 5515984 (1996-05-01), Yokoyama et al.
patent: 6004882 (1999-12-01), Kim et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for using a hard mask for critical dimension growth... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for using a hard mask for critical dimension growth..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for using a hard mask for critical dimension growth... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3455901

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.