Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-10-04
2005-10-04
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S742000, C252S079100
Reexamination Certificate
active
06951820
ABSTRACT:
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.
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Cofer Alferd
DeOrnellas Stephen P.
Jerde Leslie G.
Fliesler & Meyer LLP
Norton Nadine G.
Silicon Valley Bank
Umez-Eronini Lynette T.
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