Method for using a hard mask for critical dimension growth...

Details Method for using a hard mask for critical dimension growth... Method for using a hard mask for critical dimension growth...

2005-10-25

2005-10-25

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C438S742000

Reexamination Certificate

active

06958295

ABSTRACT:
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.

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