Method for using a field implant mask to correct low doping leve

Details Method for using a field implant mask to correct low doping leve Method for using a field implant mask to correct low doping leve

1992-02-13

1993-11-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 63, 437 69, 437909, 148DIG10, 148DIG102, H01L 21265

Patent

active

052583171

ABSTRACT:
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding said active area is implanted, said implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.

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