Method for using a charge injection transistor

Details Method for using a charge injection transistor Method for using a charge injection transistor

1995-10-20

1997-04-29

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge injection device

257321, 257324, 257325, 257326, 257327, 257405, 257645, 257651, H01L 2976

Patent

active

056252080

ABSTRACT:
A charge or carrier injection transistor including a substrate, a gate electrode and an electric potential barrier layer forming an electric potential barrier against charges (either holes or electrons) injected by the gate electrode towards the substrate. A source and a drain are formed in the substrate on opposite sides of the gate electrode. A conduction channel, between the source and the drain, is formed on the substrate by charges passing through the electric potential barrier by a voltage applied to the gate electrode. When the applied voltage is removed, this channel disappears. That is, the transistor is ON when the charges from the gate electrode pass through the electric potential barrier and is OFF when no charges pass through it, thereby the charges perform a transistor switching function.

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 4047974 (1977-09-01), Harari
patent: 4115914 (1978-09-01), Harari
Sze, Physics of Semiconductor Devices, 2nd Edition, 1981, pp. 504-506 and 510.
Paper Entitled "Semiconductor Devices Physics and Technology" (pp. 187-221) by S.M. Sze (AT&T Bell Laboratories), Published by John Wiley & Sons Copyrighted in 1985.

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