Method for trimming thin-film transistor array

Details Method for trimming thin-film transistor array Method for trimming thin-film transistor array

1988-02-26

1988-11-22

Albritton, C. L.

Electric heating

Metal heating

By arc

357 51, B23K 2600

Patent

active

047867809

ABSTRACT:
A thin-film transistor array is constructed of at least a first thin-film transistor and a second thin-film transistor connected in parallel with the first thin-film transistor. These transistors are formed on a substrate under the condition that a source bus and a gate bus are connected to these transistors with forming a crossover portion. These parallel-connected transistors drive one pixel of a liquid crystal element. The first and second thin-film transistors are independently positioned in a symmetrically positional relationship with sandwiching the gate and source buses. In accordance with a laser trimming method of the invention, either gate bus or source bus located at one side of the crossover portion is first cut out so as to electrically disconnect the normally operable thin-film transistor from the array.

REFERENCES:
patent: 4150366 (1979-04-01), Price
patent: 4240094 (1980-12-01), Mader
patent: 4476375 (1984-10-01), Ogawa

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