Method for treatment of metal substrate for growth of hydrogen-c

Details Method for treatment of metal substrate for growth of hydrogen-c Method for treatment of metal substrate for growth of hydrogen-c

1982-07-26

1984-03-13

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 86, 136258, B05D 306

Patent

active

044367619

ABSTRACT:
In the deposition of a hydrogen-containing semiconductor film on a metal substrate, the electric contact characteristic between the metal substrate and the semiconductor film is improved by preparatorily exposing to hydrogen plasma the surface of the metal substrate on which the semiconductor film is to be deposited.

REFERENCES:
patent: 4200473 (1980-04-01), Carlson

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