Method for treating surface of organic insulating film using...

Liquid crystal cells – elements and systems – Particular structure – Having significant detail of cell structure only

Reexamination Certificate

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C349S139000, C349S143000, C438S030000

Reexamination Certificate

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07133100

ABSTRACT:
A fabricating method of a thin film transistor substrate according to the present invention includes the steps of forming on a substrate material a thin film transistor array including a plurality of signal lines; forming an organic insulating film on the substrate material on which the thin film transistor array has formed; patterning the organic insulating film; performing a surface treatment on a surface of the organic insulating film using helium plasma; and forming a transparent electrode layer on the organic insulating film.

REFERENCES:
patent: 5805252 (1998-09-01), Shimada et al.
patent: 5891527 (1999-04-01), Turek et al.
patent: 6038008 (2000-03-01), Kim et al.
patent: 6118218 (2000-09-01), Yializis et al.
patent: 6124517 (2000-09-01), Kaminsky et al.
patent: 6218206 (2001-04-01), Inoue et al.
patent: 6441553 (2002-08-01), Yializis et al.
patent: 6678035 (2004-01-01), Lee et al.
patent: 2002/0195950 (2002-12-01), Mikhael et al.
patent: 2003/0059550 (2003-03-01), Nishikawa et al.
patent: 2003/0155332 (2003-08-01), Datta et al.
patent: 11-283934 (1999-10-01), None

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