Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Including contaminant removal or mitigation
Reexamination Certificate
2007-06-26
2007-06-26
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Including contaminant removal or mitigation
C438S457000, C438S458000, C438S459000, C438S474000, C438S475000, C438S476000, C438S477000, C438S796000, C438S797000, C438S798000, C438S799000, C257SE21122, C148S033400
Reexamination Certificate
active
11063867
ABSTRACT:
An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.
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Barge Thierry
Furihata Jun-ichiro
Ghyselen Bruno
Iwamatsu Toshiaki
Mitani Kiyoshi
Pham Thanh V.
S.O.I.Tec Silicon on Insulator Technologies
Smith Matthew
Winston & Strawn LLP
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