Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-06-07
2005-06-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S471000, C438S475000, C257SE21568
Reexamination Certificate
active
06902988
ABSTRACT:
The invention relates to a process for the treatment of substrates (1) for microelectronics or optoelectronics comprising a working layer (6) at least partially composed of an oxidizable material on at least one of their faces, this process comprising:a first sacrificial oxidation stage for removing material constituting the working layer (6) over a certain surface thickness of each substrate (1),a stage of polishing (200) the face which has been subjected to the first sacrificial oxidation stage (100), anda second sacrificial oxidation stage for again removing material constituting the working layer (6) on the polished face (17).
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Barge Thierry
Furihata Jun-ichiro
Ghyselen Bruno
Iwamatsu Toshiaki
Mitani Kiyoshi
Fourson George
Pham Thanh V.
S.O.I.Tec Silicon on Insulator Technologies S.A.
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