Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-05-30
2006-05-30
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C438S680000, C438S061000
Reexamination Certificate
active
07053411
ABSTRACT:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
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Buckley Richard F.
Haerle Andrew G.
Hengst Richard R.
Field, III Thomas G.
Nelms David
Nguyen Thinh T
Saint-Gobain Ceramics & Plastics, Inc.
Toler Larson & Abel, LLP
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