Method for treating a surface with a microwave or UHF plasma and

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 451, 427 86, B05D 306

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045856680

ABSTRACT:
A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of magnitude 50 centimeters). The plasma disks can be created without using a static magnetic field. The radio frequency waves are preferably microwaves or UHF. The method is particularly useful for ion or free radical irradiation of the surface provided in the plasma or for irradiation of the surface by ions accelerated outside a cavity containing the plasma. Disk plasmas are created over a wide pressure range (10.sup.-4 Torr to 1 atmosphere) and are highly ionized at low pressures. An apparatus adapted for treating a surface of an article with ions from a plasma is also described. The method and apparatus are preferably used for treating a surface forming part of an integrated circuit.

REFERENCES:
patent: 3757733 (1973-09-01), Reinberg
patent: 4170662 (1979-10-01), Weiss et al.
patent: 4282267 (1981-08-01), Kuyel
patent: 4443488 (1984-04-01), Little et al.
patent: 4452679 (1984-06-01), Dunn et al.
patent: 4481229 (1984-11-01), Suzuki et al.
Sze, S. M., VLSI Technology, McGraw Hill, New York (1983) Chapters, 3, 4 and 8.
Suzuki, K. S. et al, "Microwave Plasma Etching" 16, 1979-1984 (1977)--Japanese J. Appl. Phys.
Suzuki, K. et al, "Microwave Plasma Etching" Proc. Int'l Ion Engineering Congress ISIAT '83 & IPAT '83, 1645-1656 (1983).
Electronics, p. 63, Nov. 20, 1980.
MacDonald, A. D. et al, "High Frequency and Microwave Discharges" in Gaseous Electronics, M. N. Hirsch et al eds., vol. I Academic Pr. N.Y. (1978) Chap. 3.
Ligenza, J. R., "Silicon Oxidation in an Oxygen Plasma Excited by Microwaves," J. Appl. Phys., 36, 2703-2707 (1965).
Gourrier, S., et al, "Review of Oxide Formation in a Plasma", Plasma Chemistry and Plasma Processing, 1, 217-232 (1981).
Katz, L. E., "Oxidation", Chapter 4 in VLSI Technology, S. M. Sze editor, Wiley, New York, (1983).
Ho, V. Q. et al, "Selective Anodic Oxidation of Silicon in Oxygen Plasma", IEEE Tran. Elect. Dev., ED-27, 1436-1443, (1980).
Weinreich, O. A., "Oxide Films Grown on GaAs in an Oxygen Plasma", J. Appl. Physics, 37, 2924, (1966).
Chang, R. P. H. and A. K. Sinha, "Plasma Oxidation of GaAs", Appl. Phys. Lett, 29, 56-58 (1976).
Sugono, T., F. Koshiga, K. Yamasolci, and S. Takahashi, "Application of Anodization in Oxygen Plasma to Fabrication of GaAs IGFET's", IEEE Tran. Elect Dev., ED-27, 449-455 (1980).
Yokoyoma, N., T. Mimura, and M. Fukata, "Plasma GaAs MOSFET Integrated Logic", ED-27, 1124-1128, (1980).
Wieder, H. H., "Materials Options for Field Effect Transistors", J. Vac. Sci. Technol. 18, 827-837 (1981).
Lile, D. L., D. A. Collins, L. G. Meiners, and L. Messich, "N-Channel Inversion Mode InP MISFET", Electron. Lett., 14, 657-659 (1978).
Henry, L., D. LeCrosnier, H. L'Haridon, J. Paugam, G. Pelous, F. Richou, M. Salvi, "N-Channel MISFET's on Semi-Insulating InP for Logic Applications", Electron. Lett., 18 102-103 (1982).
Kanazawa, K. and H. Matsunami, "Plasma Grown Oxide on InP", Japanese J. Appl. Phys, 20, L211-L213, (1981).
Colburn, J. W. and H. F. Winters, "Plasma-Etching-A Discussion of Mechanisms", J. Vac. Sci. Technol., 16, 391-403, (1979).
Elliott, D. J., Integrated Circuit Technology, Chapter 11, McGraw-Hill, (1982).
Lin, I., D. C. Hinson, W. H. Class, and R. L. Sandstrom, "Low Energy High Flux Reactive Ion Etching by R. F. Magnetron Plasma", Appl Phys. Lett., 44, 185-187 (1981).
Bollinger, L. D., "Ion Beam Etching with Reactive Gases", Solid State Technology, 26, 99-108, (Jan. 1983).
Geis, M. W., G. A. Lincoln, N. Efremow, and W. J. Piacentini, "A Novel Anisotropic Dry Etching Technique", J. Vac. Sci. Technol. 19, 1390-1393 (1981).
Chinn, J. D., A. Fernandez, I. Adesida, and E. D. Wolf, "Chemically Assisted Ion Beam Etching of GaAs, Ti, and Mo," J. Vac. Sci. Technol. A1, 701-704, (1983).
Chinn, J. D., I. Adesida, and E. D. Wolf, "Profile Control of Chemically Assisted Ion Beam and Reactive Ion Beam Etching" Appl. Phys. Lett, 43, 185-187 (1983).
Minkiewicz, V. J. and B. N. Chapman, "Triode Plasma Etching", Appl. Phys. Lett. 34, 192 (1979).
Mantei, T. D. and T. Wicker, "Plasma Etching with Surface Magnetic Field Confinement", Appl. Phys. Lett. 43, 84 (1983).
Loncar, G., J. Musil and L. Bardos, "Present States of Thin Oxide Films Creation in a Microwave Plasma", Czech. J. Phys. B30, 688-707, (1980).
Lisitano, G., M. Fontanesi and Sindoni, E., "Nonresonant Absorption of Electromagnetic Waves in a High Density Plasma", Appl. Phys. Lett., 16, 122-124 (1970).

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