Method for treating a substrate

Details Method for treating a substrate Method for treating a substrate

2007-09-11

2007-09-11

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C156S345300

Reexamination Certificate

active

10954086

ABSTRACT:
A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

REFERENCES:
patent: 6908530 (2005-06-01), Huang et al.
patent: 6916678 (2005-07-01), Kitagawa et al.
patent: 2004/0040664 (2004-03-01), Yang et al.
patent: 2004/0092047 (2004-05-01), Lymberopoulos et al.
patent: 2004/0226511 (2004-11-01), Lai et al.

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