Method for transferring a semiconductor body from a growth...

Details Method for transferring a semiconductor body from a growth... Method for transferring a semiconductor body from a growth...

2008-03-11

2008-03-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21600

Reexamination Certificate

active

11244802

ABSTRACT:
A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.

REFERENCES:
patent: 3808550 (1974-04-01), Ashkin
patent: 4448636 (1984-05-01), Baber
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5465009 (1995-11-01), Drabik et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5985687 (1999-11-01), Bowers et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6159824 (2000-12-01), Henley et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6740604 (2004-05-01), Kelly et al.
patent: 6974758 (2005-12-01), Kelly et al.
patent: 35 08 469 (1986-09-01), None
patent: 0 718 885 (1996-06-01), None
patent: 0 987 741 (2000-03-01), None
M.K. Kelly et al.: “Optical Patterning of GaN films”, Appl. Physics, Letter 69 (12), Sep. 16, 1996, pp. 1749-1751.
Eli Yablonovitch et al.: “Extreme Selectivity in the Lift-Off of Epitaxial GaAs films”, Appl. Physics Letter 51 (26), Dec. 28, 1987, pp. 2222-2224.
R. Groh et al.: “On the Thermal Decomposition of GaN in Vacuum”, pp. 353-357.
Yasua Morimoto: “Few Characteristics of Epitaxial GaN-Etching and Thermal Decomposition”, J. Electrochemical Society: Solid State Science and Technology, Oct. 1974, pp. 1383-1384.
R.T. Leonard et al.: “Photoassisted Dry Etching of GaN”, Appl. Physics, Letter 68, Feb. 5, 1996, pp. 794-796.
Young-Feng Lu et al.: “Laser-Induced Dry Lift-Off Process”, Jpn. J. Appl. Physics, vol. 34, 1995, pp. 1669-1670.
Young-Feng Lu et al.: “Excimer-Laser Removal of SiO2 Patterns from GaAs Substrates”, Jpn. Appl. Physics, vol. 33, 1994, pp. 324-327.
C.R. Miskys et al.: “MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates”, Phys. Stat. Sol. (a) 176, 443 (1999), pp. 443-446.
L. Tsakalakos et al.: “Epitaxial Ferroelectric (Pb, La)(Zr, Ti)O3 Thin Films on Stainless Steel By Excimer Laser Liftoff”, Applied Physics Letters, vol. 76, No. 2, Jan. 10, 2000, pp. 227-229.
Sung-Gap Lee, et al.: “Preparation and Characterization of Lead Zirconate Titanate Heterolayered Thin Films on Pt/Ti/SiO2/Si Substrate by Sol-Gel Method”, Jpn. J. Appl. Physics., vol. 38, Part 1, No. 1A, Jan. 1999, pp. 217-218.
Y.-K. Song, et al.: “A vertical cavity light emitting inGaN quantum well heterostructure”, Applied Physics Letters, vol. 74, No. 23, Jun. 7, 1999, pp. 3441-3443.

Affiliated with

Also associated with

Rating

Method for transferring a semiconductor body from a growth... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for transferring a semiconductor body from a growth..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for transferring a semiconductor body from a growth... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3932402