Method for topically-resolved determination of the diffusion len

Details Method for topically-resolved determination of the diffusion len Method for topically-resolved determination of the diffusion len

1990-05-11

1991-04-23

Wieder, Kenneth

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158R, 324 731, G01R 3126

Patent

active

050102940

ABSTRACT:
The measurement of the diffusion length of minority charge carriers in a semiconductor crystal body is enabled in that the front side and the rear side of the crystal wafer are each respectively brought into contact with an electrolyte in a respective measuring cell and an inhibiting space charge zone is generated at the front side of the wafer. The front side is irradiated with light having a wave length of .lambda.>800 nm and the front side photocurrent I.sub.1 of the minority charge carriers thereby generated is measured. The diffusion length L can be calculated from the photocurrent I.sub.1 with the assistance of a mathematical equation. The topical distribution of the diffusion length L is obtained given point-by-point irradiation and scanning over the crystal wafer. Diffusion lengths of L<150 .mu.m can be measured by selecting a light source having a wave length of .lambda.>800 nm.

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Das, "Non-destructive Electrolytic Localization of Pipe Sites in Bipolar Transistors", IBM Technical Disclosure Bulletin, vol. 20, No. 2, 7/1979, pp. 604-607.

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