Method for thinning a semiconductor wafer

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

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156154, 156230, 156241, 1562755, 1562757, 1562722, 156344, B32B 3104, B32B 3122, B32B 3128

Patent

active

054765668

ABSTRACT:
Advances in wafer technology and packaging have led to an increase in wafer size while requiring a decrease in wafer thickness. Thickness limitations increase as wafer diameter increases. Thinning a wafer past a certain limit can result in wafer breakage. A laminated semiconductor wafer structure (10) is assembled to provide mechanical support for the wafer. A semiconductor wafer (12) is affixed to a UV transparent support substrate (16) with a double-sided adhesive tape (14). The tape has dissimilar adhesives on its two sides. The first side has a UV curable adhesive (22) that adheres to the active surface of the wafer. The second side has a non-UV curable adhesive (24) which adheres to the UV transparent support substrate. This laminated structure can be used during a wafer thinning process and any subsequent handling. The support substrate and the tape are removed from the wafer by exposing the laminated structure to UV radiation.

REFERENCES:
patent: 4104099 (1978-08-01), Scherrer
patent: 4138304 (1979-02-01), Gantley
patent: 4316757 (1982-02-01), Walsh
patent: 4466852 (1984-08-01), Beltz etal.
patent: 4718967 (1988-01-01), Irie
patent: 4720317 (1988-01-01), Kuroda et al.
patent: 4839206 (1989-06-01), Waldenberger
patent: 4891334 (1990-01-01), Satoh et al.
patent: 4946716 (1990-08-01), Corrie
patent: 5113622 (1992-05-01), Nishiguchi et al.
patent: 5171398 (1992-12-01), Miyamoto
patent: 5273615 (1993-12-01), Asetta et al.
William C. Howell, "The Direct Demount of Thinned GaAs Wafers to Sawing Tape", Conference on Gallium Arsenide Manufact. Tech. (MANTECH 1990) pp. 48-51.
Richard L. Lane, "Silicon Wafer Preparation," Handbook of Semiconductor Silicon Technology, 1990, pp. 192-257.

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