Method for thermally oxidizing silicon

Details Method for thermally oxidizing silicon Method for thermally oxidizing silicon

1976-08-30

1978-08-22

Gwinnell, Harry J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427248C, 427255, C23C 1100

Patent

active

041090306

ABSTRACT:
A method of thermally oxidizing heated silicon substrates with a mixture of oxygen and nitrosyl chloride in an inert gas diluent such as nitrogen. The ratio of oxygen to nitrosyl chloride is illustratively in the range of about 1:1 to about 20:1.

REFERENCES:
patent: 3446659 (1969-05-01), Wisman et al.
patent: 3903325 (1975-09-01), Horiuchi
patent: 4034130 (1977-07-01), Briska et al.
Kriegler et al., "The Effect of HCl . . .", J. Electrochem Soc. vol. 119, pp. 388-391 (3-1972).

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