Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Patent
1998-09-30
2000-11-21
Fourson, George
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
438406, 117915, H01L 21304
Patent
active
061502391
ABSTRACT:
A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the high temperature implantation of hydrogen, and by their combination, followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, and growth of hydrogen filled microcracks.
REFERENCES:
patent: 4883215 (1989-11-01), Stengl et al.
patent: 5024723 (1991-06-01), Goesele et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5882987 (1999-03-01), Srikrishnan
M. Bruel, "Silicon on insulator material technolgy", Electronic Letters vol. 31, (1995) pp. 1201-1202.
L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaund and M. Bruel, "Silicon carbide on insulator formation using the Smart Cut process", Electronic Letters, vol. 32 (1996) pp. 1144-1145.
N. W. Cheung, "Plasma immersion ion implantation for semiconductor processing", Materials Chemistry and Physics, vol. 46 (1996), pp. 132-139.
L. B. Freund, "A lower bound on implant density to induce wafer splitting in forming compliant substrate structures", Applied Physics Letters, vol. 70 (1997), pp. 3519-3521.
Aditya Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham, "Efficient production of silicon-on-insulator films by co-implantation of He.sup.+ with H.sup.+ " Applied Physics Letters, vol. 72 (1998), pp. 1086-1088.
Goesele Ulrich M.
Tong Qin-Yi
Fourson George
Max Planck Society
LandOfFree
Method for the transfer of thin layers monocrystalline material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the transfer of thin layers monocrystalline material , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the transfer of thin layers monocrystalline material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256380