Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing
Patent
1993-02-10
1995-01-10
Dees, Jose G.
Organic compounds -- part of the class 532-570 series
Organic compounds
Heavy metal containing
556121, 556187, 556478, 556 7, 556 95, 556 98, 556129, C07F 308, C07F 310, C07F 500, C07F 708
Patent
active
053808959
ABSTRACT:
Method for forming metal alkyl compounds by the direct combination of metal halide, lithium metal, and alkyl or aryl halide and for purifying metal alkyl compounds by repeated sublimation/pumping cycles. The method can be used to produce metal alkyl compounds which are substantially free of volatile impurities.
REFERENCES:
patent: Re33292 (1990-08-01), Bradley et al.
patent: 4599150 (1986-07-01), Mullin et al.
patent: 4720560 (1988-01-01), Hui et al.
patent: 4847399 (1989-07-01), Hallock et al.
Eisch et al., Organometallic Synthesis, vol. 2, Academic Press, pp. 89-90 (1981).
Bradley et al., 1988, "Lability of dimethylethyl compounds of indium and aluminium," Chemtronics 3:159-161.
Clark et al., 1967, "Organoindium Chemistry: I. A. Convenient Preparation of Dimethylindium(III) Derivatives," Journal of Organometallic Chemistry 8:427-434.
Coates et al., 1956, "Co-ordination Complexes of Methyl Derivatives of Indium and Thallium," J. Chem. Soc. pp. 3351-3354.
Dennis et al., 1934, "Indium Trimethyl," J. American Chemical Society pp. 1047-1049.
Eisch, 1962, "Organometallic Compounds of Group III. I. The Preparation of Gallium and Indium Alkyls from Organoaluminum Compounds", J. American Chemical Society 84(19):3605-3610.
Foster et al., 1988, "Synthesis and Thermal Properties of Adducts of Trimethylindium with Nitrogen-containing Lewis Bases," J. Chem. Soc. Dalton Trans. (1988) p. 7.
Jones et al., 1986, "Analysis of High Purity Metalorganics by ICP Emission Spectrometry," Journals of Crystal Growth 77:47-54.
Krommes et al., 1973, "Eine Verbesserte Darstellungsmethode Fur Indiumtrimethyl," Inorg. Nucl. Chem. Letters 9:587-589.
Moore et al., 1986, "High Mobility InP Epitaxial Layers Prepared by Atmospheric Pressuer Movpe Using Trimethylindium Dissociated from an Adduct with 1,2-Bis(Diphenyl Phosphino)Ethane," Journal of Crystal Growth 77:19-22.
Runge et al., 1951, "Indiumorganische Verbindungen,"0 Zeitschrift fur anorganische und allgemeine Chemie, Band 267, pp. 39-48.
Stone, 1958, "Stability Relationships Among Analogous Molecular Addition Compounds of Group III Elements," Chemical Reviews 58:117-129.
Todt et al., 1963 "Darstellung von Indium-trialkylen uber In-Mg-Legierung oder-Mischung," Zeitschrift fur anorganische und allgemeine Chemie, Band 321, pp. 120-123.
Zanella et al., 1991, "Organometallic Precursors in the Growth of Epitaxial Thin Films of Groups III-V Semiconductors by Metal-Organic Chemical Vapor Deposition," Chem. Mater. 3(2):225-242.
Bandgap Technology Corporation
Dees Jos,e G.
Nazario-Gonzalez Porfirio
LandOfFree
Method for the synthesis of metal alkyls and metal aryls does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the synthesis of metal alkyls and metal aryls, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the synthesis of metal alkyls and metal aryls will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-852018