Fishing – trapping – and vermin destroying
Patent
1992-06-11
1994-06-07
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437238, 437241, H01L 2100, H01L 2102, H01L 21302, H01L 21463
Patent
active
053189280
ABSTRACT:
The method calls for introducing an inert gas into a tank where a high frequency energy source is applied to internal electrodes for the ignition of a plasma within the tank. The sensor surface is cleaned by sputtering away impurities from the sensor surface by means of plasma particles striking the sensor surface. Next, a monomer containing silicon and a reactive gas are introduced into the tank with continuous throttling of the inert gas feed and maintenance of the plasma, while the electric power characteristics fed into the plasma are being controlled. This leads to the deposition on the sensor surface of a compound composed of particles from the monomer containing silicon and from the reactive gas.
REFERENCES:
patent: 4446194 (1982-07-01), Candelaria et al.
patent: 4744863 (1986-05-01), Guckel et al.
patent: 4892753 (1988-01-01), Wang et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5041303 (1991-08-01), Wertheimer et al.
patent: 5061514 (1991-10-01), Boeglin
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, p. 520.
Chang, Novel Passivation Dielectrics-The Boron- or Phosphorus-doped Hydrogenated Amorphous Silicon Carbide Films, J. Electrochem. Soc.: Sol. State Sci and Tech., Feb. 1985, vol. 132, No. 2, pp. 418-422.
Nguyen et al, Reaction Mechanisms of Plasma Journal of the Electrochemical Society, vol. 137, No. 7 (1990 pp. 2209-2215.
Peters et al., Integrated Optical Devices, SPIE Proceedings Oct. 28, 1990 vol. 1362, pp. 338-349.
Chin et al., Plasma TEOS Process for Interlayer Dielectric Applications, Solid State Technology Apr. 1988 pp. 119-122.
Freeman, Properties of Low-Pressure Chemical Vapor Deposited Dielectric Films from Hexamethyllisilazane, J. Vac. Sci. Technol. A 7(3), Jun. 1989, pp. 1446-1450.
Chang, Novel Passivation Dielectrics-The Boron-or Phosphorus-Doped Hydrogenated Amorphous Silicon Carbide Films, J. Electrochem. Soc.: Sol. State Sci and Tech., vol. 132, No. 2, pp. 418-422.
Disposition of High Quality Oxides Using a TEOS Precursor, IBM Tech. Discl. Bull., pp. 235-236, vol. 32, No. 11, Apr. 1990.
Pang, Amor Carbon Films as Planarization Layers Deposited by Plasma-Enhanced CVD, IEEE Elect. Dev. Lett., vol. 11, No. 9, Sep. 1990, pp. 391-393.
Rathbun, Passivating Coating IBM Tech. Disclo. Bull., vol. 26, No. 2, Jul. 1983, p. 588.
Raveh, Characteristics of Radio Frequency Silicon Carbide Films, J. Vac. Sci. Technol. A5, (5), Oct. 1987, pp. 2836-2841.
Rosler, The Evolution of Commercial Plasma Enhanced CVD Systems, Solid State Tech., Jun. 1991, pp. 67-71.
Hey, Ion Bombartment: A Determining Factor in Plasma CVD, Solid State Tech. Apr. 1990, pp. 139-144.
Fung, Micromachining and Micropackaging of Transducers, Elsevier, 1985, pp. 184-185.
Gegenwart Rainer
Ritter Jochen
Stoll Helmut
Weimer Norbert
Wurczinger Hans-Dieter
Everhart B.
Hearn Brian E.
Leybold Aktiengesellschaft
LandOfFree
Method for the surface passivation of sensors using an in situ s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the surface passivation of sensors using an in situ s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the surface passivation of sensors using an in situ s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-792527