Fishing – trapping – and vermin destroying
Patent
1991-06-06
1993-04-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 41, 437187, 437184, 148DIG140, H01L 2144
Patent
active
052003574
ABSTRACT:
Disclosed is a method for making self-aligned metal contacts on semiconductor devices, with a submicronic spacing between regions controlled by the contacts. On a semiconductor body supporting at least one raised pattern, a double layer of SiO.sub.2 and Si.sub.3 N.sub.4 is deposited by an isotropic method. A double ionic etching of Si.sub.3 N.sub.4 by SF.sub.6 and of SiO.sub.2 by CHF.sub.3 is done to insulate the sidewalls on the flanks of the pattern. A sub-etching by HF/NH.sub.4 F/H.sub.2 O creates a cap beneath each sidewall. The metal contacts, deposited by evaporation, are self-aligned and separated by a space "d" equal to the thickness of the insulating layers.
REFERENCES:
patent: 4587710 (1986-05-01), Tsao
patent: 4735680 (1988-04-01), Yen
patent: 4886765 (1989-12-01), Chen et al.
patent: 4908326 (1990-03-01), Ma et al.
patent: 4925807 (1990-05-01), Yoshikawa
patent: 5015598 (1991-05-01), Verhaar
patent: 5015599 (1991-05-01), Verhaar
IBM Technical Disclosure Bulletin, vol. 26, No. 7b. Dec., 1983, pp. 3842-3844. H. H. Chao, et al., "Stepped Oxide Spacer Process for Self-Aligned Silicide Without Bridging".
Collot Philippe
Schmidt Paul
"Thomson-CSF"
Hearn Brian E.
Trinh Michael
LandOfFree
Method for the self-alignment of metal contacts on a semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the self-alignment of metal contacts on a semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the self-alignment of metal contacts on a semiconduct will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-536257