Method for the selective dry etching of layers of III-V group se

Details Method for the selective dry etching of layers of III-V group se Method for the selective dry etching of layers of III-V group se

1987-04-27

1988-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156643, 156650, 156646, 156662, 437203, 357 22, 148DIG131, H01L 21465

Patent

active

047420260

ABSTRACT:
The invention pertains to a method for the selective etching of a surface layer which is automatically stopped at a subjacent layer.
According to the invention, a first layer of a material containing gallium is selectively etched with respect to a second layer containing aluminium by reactive ion etching in the presence of a pure freon plasma C Cl.sub.2 F.sub.2. At low pressures (0.5 to 2.5 pascals), the etching is anisotropic and makes it possible to etch the gate recess of a field effect transistor. At a higher pressure (6 to 10 pascals), the etching is isotropic and makes it possible to sub-etch the first layer.
Application to the manufacture of field effect transistors made of group III-V materials, with low access resistances.

REFERENCES:
patent: 4326911 (1982-04-01), Howard et al.
patent: 4457820 (1984-07-01), Bergeron et al.
patent: 4484978 (1984-11-01), Keyser
patent: 4603420 (1986-07-01), Nishizawa et al.
patent: 4615102 (1986-10-01), Suzuki et al.
Hikosaka et al., "Selective Dry Etching of AlGaAs--GaAs Heterjunction," Jap. J. Appl. Phys. vol. 20, No. 11, Nov., 1981, pp. L845-L850.
Hipwood et al, "Dry Etching of Through Substrate Via Holes for GaAs MMIC's, " J. Vac. Sci. Technology B, vol. 3, No. 1, Jan./Feb., 1985, pp. 395-397.
Hu et al., "RIE of GaAs and lnP using CCl.sub.2 F.sub.2 /Ar/O.sub.2 ", Appl. Phys. Lett., vol. 37, No. 11, Dec. 1, 1980, pp. 1022-1024.

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