Coating processes – Coating by vapor – gas – or smoke – Metal coating
Patent
1993-06-03
1995-02-07
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Metal coating
427255, 4272551, C23C 1604, C23C 1608
Patent
active
053874382
ABSTRACT:
Method for the selective deposition of tungsten on a silicon surface. A silicon surface is provided with a masking structure of, for example, SiO.sub.2. The deposition from the vapor phase is implemented in a CVD reactor from a mixture of process gases such that the masking structure remains essentially free of tungsten. The process parameters of temperature, pressure and flow-through rates of the process gases for the selective deposition are determined for a prescribed deposition rate by solving an equation system that contains the conservation laws for the mass, the chemical constituents participating in the deposition reaction, the momentum and the energy taking the boundary conditions of the CVD reactor into consideration, and the effects of thermodiffusion and multi-constituent diffusion.
REFERENCES:
patent: 4503601 (1985-03-01), Chiao
patent: 4562638 (1986-01-01), Schwabe et al.
patent: 4595608 (1986-06-01), King et al.
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4746549 (1988-05-01), Ito et al.
patent: 4794019 (1988-12-01), Miller
patent: 5037775 (1991-08-01), Reisman
Applied Surface Science, Bd 38 Apr. 10, 1989 "Flow and Reaction Simulation of a Tungsten CVD Reactor " Ulacia et al pp. 370-385.
Singh et al. Slim: Simulation of Laser Interactions with Materials, University of Florida.
Tungsten & Other Advanced Metals for VLSI/ULSI Applications V, Materials Research Society, Pitts., Pa., Bd. 5, "An Experimental & Modeling Study of the Tungsten LPCVD Growth Kinetics from H2-WF6 at Low WF6 Partial Pressures", by C. R. Kleijn et al, Oct. 19, 1989, pp. 109-116.
Applied Surface Science, Bd. 38, Amsterdam, NL, Apr. 10, 1989, "Flow & Reaction Simulation of a Tungsten CVD Reactor", by J. I. Ulacia et al, pp. 370-385.
"Kinetics & Mechanism of Selective Tungsten Deposition by LPCVD" by Pauleau et al, J. Electrochem. Soc., Solid-State Science & Technology Nov., 1985, pp. 2779-2784.
"Flow & Reaction Simulation of a Tungsten CVD Reactor", by Ulacia et al, Appl. Surface Science, 38, 1989, pp. 370-385.
"The Kinetics of LPCVD Tungsten Deposition in a Single Wafer Reactor" by McConica et al, Journal of the Electrochemical Society 133, Dec. 1986, pp. 2542-2548.
Ulacia Ignacio
Werner Christoph
Beck Shrive
Chen Bret
Siemens Aktiengesellschaft
LandOfFree
Method for the selective deposition of tungsten on a silicon sur does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the selective deposition of tungsten on a silicon sur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the selective deposition of tungsten on a silicon sur will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1109181