Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-01-25
2011-01-25
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257S618000, C438S460000
Reexamination Certificate
active
07875531
ABSTRACT:
A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.
REFERENCES:
patent: 4582559 (1986-04-01), Tanielian et al.
patent: 6770542 (2004-08-01), Plossl
patent: 6802926 (2004-10-01), Mizutani et al.
patent: RE39484 (2007-02-01), Bruel
Blakers et al., “Recent development in Sliver Cell Technology”, 20th European Photovoltaic Solar Energy Conference, Jun. 6-10, 2005, Barcelona, Spain.
Brendel, R., Jpn. J. Appl. Phys. vol. 40, Part 1, No. 7, 4431 (2001).
Carnel et al. “Perspectives for a-Si/c-Si Heterojunction Solar Cells with p or n Type Base” 31stIEEE PVSC, pp. 1157-1160 (2005).
Janoch et al. Conference Record IEEE Photovoltaic Specialists Conference, 1997.
Koch et al., Proceedings Td World PVSEC. 1998, p. 1254.
Shao et al., Applied Physics Letters 87, 091902, 2005, and S Bengtsson—Solid-State and Integrated Circuit Technology, 1998.
Solanki et al., Phys. Stat. Sol. (a), 182 (2000) 97.
Weber et al., Appl. Phys. A, A69 (1999) 195.
Beaucarne Guy
Dross Frédéric
Kerschaver Emmanuel Van
Henry Caleb
IMEC
Katholieke Universiteit Leuven K.U. Leuven R&D
Knobbe Martens Olson & Bear LLP
Pham Thanh V
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