Method for the production of semiconductor devices with an integ

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29580, 29583, 29591, 357 81, H01L 21288

Patent

active

039733203

ABSTRACT:
A process for producing a semiconductor device with an integral heatsink involving applying a coating of dielectric to a sheet of semiconductor material, removing part of the dielectric coating by etching to leave specific sink zones, coating the zones with a metal layer, bonding the assembly to a support with adhesive, depositing a layer of metal to the non-adhered surface of the semiconductor sheet in areas corresponding to the sink zones, and removing semiconductor material from the body of the sheet between the sink zones to produce mesa profile units with heatsinks.

REFERENCES:
patent: 3453722 (1969-07-01), Ramsey, Jr. et al.
patent: 3689993 (1972-09-01), Tolar
patent: 3794883 (1974-02-01), Bylander et al.
patent: 3850707 (1974-11-01), Bestland

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for the production of semiconductor devices with an integ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the production of semiconductor devices with an integ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of semiconductor devices with an integ will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1736437

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.